Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of Poncho dielectric TiO2/SiO2 DBR on optical and electrical characteristics of FCLEDs.The reflector consisting of two single TiO2/SiO2 DBR stacks optimized for different central wavelength

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A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control

Summary: As the limited copyright densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes.These coplanar gates can be fabricated in a simple one-step lithography process and are freq

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